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    2002 May 28 2 NXP Semiconductors Product data sheet Schottky barrier diode BAT254 FEATURES ? Low forward voltage ? Guard ring protected ? Very small ceramic SMD package. APPLICATIONS ? Ultra high-speed switching ? Voltage clamping ? Protection circuits ? Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic SMD package. handbook, 4 columnsak MAM214 ka cathode mark top view side view bottom view Fig.1 Simplified outline (SOD110) and symbol. Marking code: L4. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage ? 30 V IF continuous forward current ? 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 ? 300 mA IFSM non-repetitive peak forward current tp < 10 ms ? 600 mA Tstg storage temperature ?65 +150 °C Tj junction temperature ? 125 °C Tamb operating ambient temperature ?65 +125 °C |